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TOSHIBA ENHANCES HIGH-PERFORMANCE MEMORY PORTFOLIO WITH SECOND GENERATION FCRAM™ FAMILY FOR NETWORKING AND SERVER APPLICATIONS

Next Generation of FCRAM Raises the Bar for High-Speed Memory Performance

IRVINE, Calif., January 21, 2002-Committed to remain at the forefront of specialized DRAM technology, Toshiba America Electronic Components, Inc. (TAEC)* with its parent company, Toshiba Corporation (Toshiba) today announced its second generation Fast Cycle Random Access Memory (FCRAM) family of products. The new devices feature performance enhancements over Toshiba's previous generation of FCRAM devices, including faster access time, shorter random cycle time and higher bandwidth. Designated TC59LM806CFT and TC59LM814CFT, the newly-enhanced FCRAMs can achieve fast performance up to 200 megahertz (MHz), a random cycle time of 25 nanoseconds (ns) and bandwidth of 400 megabits per second (Mbps). These features make them ideal for high-speed networking, network servers, switches and routers, and Internet server applications.

"Toshiba is dedicated to maintaining a strong presence in the memory business and to supporting the increasing performance requirements of our customers," said Naohisa Sano, vice president of TAEC's memory business unit. "This announcement demonstrates our commitment and determination to remain a leading solutions provider for next generation applications."

Toshiba's FCRAM products combine DRAM densities with random cycle performance approaching Static Random Access Memory (SRAM) speeds. By design, FCRAM architecture offers short random access and cycle times, and high bandwidth combined with a conventional Double Data Rate (DDR) interface using more cost-effective DRAM technology. In contrast to this super-fast second generation family of FCRAMs, Toshiba's first generation FCRAM devices offer a random cycle time of 32.5ns and a bandwidth of 308Mbps.

"Emerging applications from the dynamic networking and communications markets are constantly requiring higher levels of performance and speed, thereby calling for ongoing evolution in DRAM technology," said Brian Kumagai, manager of business development for DRAM products at TAEC. "As witness to this demand, many customers who have incorporated our powerful first generation FCRAMs into their designs are already anxiously awaiting the release of the faster second generation devices for use in future applications."

"As engineers craft faster and faster network computing, PC server and high performance communications systems, they are looking for faster and faster memory architectures," said Richard Doherty, research director at The Envisioneering Group. "With their second generation FCRAM, Toshiba has cleverly extended their initial family to 200 MHz bus speeds, while maintaining the same 2.5 volt power efficiencies and DDR RAM pin compatibility."

The new devices offer low power consumption of 2.5 volts (V) by narrowing memory active areas. They incorporate a proprietary core technology for achieving fast random access cycle times. To meet specific application requirements, Toshiba's FCRAMs are available with different functions including variable write length. Pinout and I/O interface are compatible with standard DDR Synchronous Dynamic Random Access Memories (SDRAMs).

Additional Features

  • Low latency
  • Advanced 0.175 micron (µm) process technology
  • Uses a differential receiver for clock signal
  • Available in x8 and x16 configurations
  • Electrically selectable data input/output driver strength
  • Housed in a TSOP2 package

Technical Specifications: TC59LM814CFT and TC59LM806CFT
  -50 -55 -60
Clock Cycle Time (CL = 3) 5.5ns 6ns 6.5ns
Clock Cycle Time (CL = 4) 5ns 5.5ns 6ns
Random Read/Write Cycle Time (min.) at CL = 3 25ns 27.5ns 30ns
Random Read/Write Cycle Time (min.) at CL = 4 25ns 27.5ns 30ns
Random Access Time (max.) at CL = 3 22ns 24ns 26ns
Random Access Time (max.) at CL = 4 22ns 24ns 26ns
Operating Current - Single Bank (max.) 190 milliamperes (mA) 180mA 170mA
Power Down Current (max.) 2mA 2mA 2mA
Self-Refresh Current (max.) 3mA 3mA 3mA

Pricing and Availability
Samples of Toshiba's second generation FCRAMs are planned to become available in February 2002, priced at US$60 each. Full production is scheduled for the second quarter of 2002. The new devices will be produced at Toshiba's advanced manufacturing facility at Yokkaichi, Japan. Advanced simulation models are available immediately from Denali at: http://www.ememory.com/Toshiba-FCRAM.

About Toshiba's FCRAM
Jointly developed with Fujitsu Limited, FCRAMs offer lower power consumption by narrowing the memory active areas and incorporate a proprietary core technology that achieves fast random access. The FCRAM solution excels in applications where DRAM densities with random cycle performance approaching SRAM speeds are needed.

Toshiba's FCRAMs offer designers many advantages including favorable cost versus performance. Incorporating FCRAM into the memory subsystem of a product can also improve system performance by enabling more searches per second without major architectural changes in the traditional CPU and memory subsystem interfaces. The devices' fast cycle times enable them to find stored data more quickly, offering a superior alternative to engineers looking to replace content addressable memory.

FCRAM System Solution
Toshiba also offers several design guides to help engineers and system architects in easily identifying the key advantages of FCRAM technology for high-performance networking applications.

"As part of our overall approach to provide complete system solutions to our customers, we have developed a paper design of an FCRAM controller, which enables system designers and architects to jump start their FCRAM controller design and development process," according to Farhad Mafie, vice president of systems application engineering and market development for TAEC.

The controller has been written in Verilog. Interested parties can acquire this design file and all of the related documentation through a simple registration at: http://www.fcram.toshiba.com.

About Denali FCRAM Support Products
The new FCRAM devices are supported by advanced simulation models developed in cooperation with Toshiba and Denali Software, Inc., a world leader in high-performance memory subsystem design and verification. These Specification of Memory Architecture (SOMA) files are used to simulate the detailed timing and behavior of the memory devices during the design and verification of new systems. Toshiba has also worked closely with Denali to ensure that the latest FCRAM devices deliver optimum performance via Denali's Databahn product for designing high-performance memory controllers. Denali's FCRAM controller design tool is configurable and produces Verilog for a wide variety of FCRAM memory systems. For more information about Denali, please visit: http://www.denali.com.

About TAEC
TAEC offers the industry's broadest line-up of semiconductor, display and storage solutions for the computing, wireless, networking and digital consumer markets. Combining quality and flexibility with design engineering expertise, TAEC brings advanced next-generation technologies to its OEM customers.

TAEC is an independent operating company owned by Toshiba America Inc., a subsidiary of the $47.9 billion (FY 2000 recorded sales) Toshiba Corporation, the second largest semiconductor company worldwide in terms of global sales for the year 2000. Toshiba is a world leader in high-technology products with more than 300 major subsidiaries and affiliates worldwide. For additional company and product information, please visit TAEC's web site at: http://www.toshiba.com/taec.

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